IPD530N15N3GBTMA1

Part NumberIPD530N15N3GBTMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 150V 21A TO252-3

DatasheetIPx530N15N3G

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 21A (Tc) 68W (Tc) Surface Mount PG-TO252-3

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IPD530N15N3GBTMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx530N15N3G

Standard Package

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

53mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 35µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

887pF @ 75V

FET Feature

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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