IPD50R1K4CEAUMA1

Part NumberIPD50R1K4CEAUMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 500V 3.1A PG-TO-252

DatasheetIPD50R1K4CE, IPU50R1K4CE

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 3.1A (Tc) 42W (Tc) Surface Mount PG-TO252-3

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IPD50R1K4CEAUMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPD50R1K4CE, IPU50R1K4CE

Standard Package

2500

Manufacturer

Infineon Technologies

Series

CoolMOS™ CE

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

13V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 900mA, 13V

Vgs(th) (Max) @ Id

3.5V @ 70µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

178pF @ 100V

FET Feature

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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