IPD50N06S4L08ATMA2

Part NumberIPD50N06S4L08ATMA2

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 50A TO252-3

DatasheetIPD50N06S4L-08

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 50A (Tc) 71W (Tc) Surface Mount PG-TO252-3-11

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IPD50N06S4L08ATMA2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPD50N06S4L-08

Standard Package

2500

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

4780pF @ 25V

FET Feature

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-11

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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