IPD50N04S410ATMA1
IPD50N04S410ATMA1
Part Number IPD50N04S410ATMA1 Description MOSFET N-CH 40V 50A TO252-3-313 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 50A (Tc) 41W (Tc) Surface Mount PG-TO252-3-313
To learn about the specification of IPD50N04S410ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD50N04S410ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD50N04S410ATMA1.
We are offering IPD50N04S410ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD50N04S410ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD50N04S4-10 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 15µA Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1430pF @ 25V FET Feature - Power Dissipation (Max) 41W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-313 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD50N04S410ATMA1 - Related ProductsMore >>
CSD17585F5 Texas Instruments, N-Channel 30V 5.9A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
PSMN016-100PS,127 Nexperia USA Inc., N-Channel 100V 57A (Tj) 148W (Tc) Through Hole TO-220AB,
View
IRF7805ZTRPBF Infineon Technologies, N-Channel 30V 16A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
FDB8860 ON Semiconductor, N-Channel 30V 80A (Tc) 254W (Tc) Surface Mount TO-263AB, PowerTrench®
View
IXFK50N85X IXYS, N-Channel 850V 50A (Tc) 890W (Tc) Through Hole TO-264, HiPerFET™
View
IRFS4310ZTRLPBF Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Surface Mount D2PAK, HEXFET®
View
HAT2168H-EL-E Renesas Electronics America, N-Channel 30V 30A (Ta) 15W (Tc) Surface Mount LFPAK,
View
STW56N65DM2 STMicroelectronics, N-Channel 650V 48A (Tc) 360W (Tc) Through Hole TO-247, MDmesh™ DM2
View
2N7002KW ON Semiconductor, N-Channel 60V 310mA (Ta) 350mW (Ta) Surface Mount SC-70 (SOT323),
View
SSM3K318R,LF Toshiba Semiconductor and Storage, N-Channel 60V 2.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIV
View
SIR182DP-T1-RE3 Vishay Siliconix, N-Channel 60V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
IXFN110N85X IXYS, N-Channel 850V 110A (Tc) 1170W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
IPD50N04S410ATMA1 - Tags
English
