IPD50N03S4L06ATMA1

Part NumberIPD50N03S4L06ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V 50A TO252-3

DatasheetIPD50N03S4L-06

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 50A (Tc) 56W (Tc) Surface Mount PG-TO252-3-11

To learn about the specification of IPD50N03S4L06ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD50N03S4L06ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD50N03S4L06ATMA1.
We are offering IPD50N03S4L06ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD50N03S4L06ATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPD50N03S4L-06

Standard Package

2500

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2330pF @ 25V

FET Feature

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-11

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

All categories