IPD40DP06NMATMA1

Part NumberIPD40DP06NMATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 60V TO252-3

DatasheetPower, Sensing Selection Guide 2019

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 4.3A (Tc) 19W (Tc) Surface Mount PG-TO252-3-313

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IPD40DP06NMATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

Power, Sensing Selection Guide 2019

Standard Package

2500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id

4V @ 166µA

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 30V

FET Feature

Power Dissipation (Max)

19W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-313

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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