IPD25N06S4L30ATMA1

Part NumberIPD25N06S4L30ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 25A TO252-3

DatasheetIPD25N06S4L-30

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 25A (Tc) 29W (Tc) Surface Mount PG-TO252-3-11

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IPD25N06S4L30ATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPD25N06S4L-30

Standard Package

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.2V @ 8µA

Gate Charge (Qg) (Max) @ Vgs

16.3nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1220pF @ 25V

FET Feature

Power Dissipation (Max)

29W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-11

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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