IPD122N10N3GBTMA1

Part NumberIPD122N10N3GBTMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 59A TO252-3

DatasheetIPD122N10N3 G

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3

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IPD122N10N3GBTMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPD122N10N3 G

Standard Package

2500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

12.2mOhm @ 46A, 10V

Vgs(th) (Max) @ Id

3.5V @ 46µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 50V

FET Feature

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

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