Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPD034N06N3GATMA1

IPD034N06N3GATMA1

IPD034N06N3GATMA1

Part NumberIPD034N06N3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 100A TO252-3

DatasheetIPD034N06N3 G

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 100A (Tc) 167W (Tc) Surface Mount PG-TO252-3

To learn about the specification of IPD034N06N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD034N06N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD034N06N3GATMA1.
We are offering IPD034N06N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPD034N06N3GATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPD034N06N3 G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11000pF @ 30V
FET Feature	-
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

IPD034N06N3GATMA1 - Related Products

	DMN62D0UW-7	Diodes Incorporated, N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323,	View
	FDPF045N10A	ON Semiconductor, N-Channel 100V 67A (Tc) 43W (Tc) Through Hole TO-220F, PowerTrench®	View
	TK040N65Z,S1F	Toshiba Semiconductor and Storage, N-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247,	View
	SISS02DN-T1-GE3	Vishay Siliconix, N-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View
	HUF76629D3ST	ON Semiconductor, N-Channel 100V 20A (Tc) 110W (Tc) Surface Mount TO-252AA, UltraFET™	View
	BSC076N06NS3GATMA1	Infineon Technologies, N-Channel 60V 50A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View
	IXTH110N25T	IXYS, N-Channel 250V 110A (Tc) 694W (Tc) Through Hole TO-247 (IXTH),	View
	HUF75639S3ST	ON Semiconductor, N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), UltraFET™	View
	CSD17318Q2	Texas Instruments, N-Channel 30V 25A (Tc) 16W (Tc) Surface Mount 6-WSON (2x2), NexFET™	View
	SQD50N04-5M6_GE3	Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	IXFP4N85XM	IXYS, N-Channel 850V 3.5A (Tc) 35W (Tc) Through Hole TO-220, HiPerFET™	View
	SI4164DY-T1-GE3	Vishay Siliconix, N-Channel 30V 30A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®	View

IPD034N06N3GATMA1 - Tags

IPD034N06N3GATMA1 IPD034N06N3GATMA1 PDF IPD034N06N3GATMA1 datasheet IPD034N06N3GATMA1 specification IPD034N06N3GATMA1 image IPD034N06N3GATMA1 India Renesas Electronics India IPD034N06N3GATMA1 buy IPD034N06N3GATMA1 IPD034N06N3GATMA1 price IPD034N06N3GATMA1 distributor IPD034N06N3GATMA1 supplier IPD034N06N3GATMA1 wholesales