IPC26N12NX1SA1

Part NumberIPC26N12NX1SA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 120V 1A SAWN ON FOIL

DatasheetIPC26N12N

Package / CaseDie

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 120V 1A (Tj) Surface Mount Sawn on foil

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IPC26N12NX1SA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPC26N12N

Standard Package

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Bulk

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

1A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 244µA

Vgs (Max)

FET Feature

Power Dissipation (Max)

Operating Temperature

Mounting Type

Surface Mount

Supplier Device Package

Sawn on foil

Package / Case

Die

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