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IPB80N06S2H5ATMA2

IPB80N06S2H5ATMA2

Part NumberIPB80N06S2H5ATMA2

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 55V 80A TO263-3

DatasheetIPx80N06S2-H5

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 55V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

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IPB80N06S2H5ATMA2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx80N06S2-H5
Standard Package	1000
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4400pF @ 25V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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