IPB80N06S209ATMA2

Part NumberIPB80N06S209ATMA2

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 55V 80A TO263-3

DatasheetIPx80N06S2-09

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 55V 80A (Tc) 190W (Tc) Surface Mount PG-TO263-3-2

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IPB80N06S209ATMA2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx80N06S2-09

Standard Package

1000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 125µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2360pF @ 25V

FET Feature

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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