Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPB70N10S312ATMA1

IPB70N10S312ATMA1

IPB70N10S312ATMA1

Part NumberIPB70N10S312ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 70A TO263-3

DatasheetIPx70N10S3-12

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 70A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2

To learn about the specification of IPB70N10S312ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB70N10S312ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB70N10S312ATMA1.
We are offering IPB70N10S312ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB70N10S312ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx70N10S3-12
Standard Package	1000
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id	4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4355pF @ 25V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB70N10S312ATMA1 - Related Products

	AOT42S60L	Alpha & Omega Semiconductor Inc., N-Channel 600V 37A (Tc) 417W (Tc) Through Hole TO-220, aMOS™	View
	SIR164DP-T1-GE3	Vishay Siliconix, N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI4842BDY-T1-GE3	Vishay Siliconix, N-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO, TrenchFET®	View
	TK560P65Y,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 7A (Tc) 60W (Tc) Surface Mount DPAK, DTMOSV	View
	FDH3632	ON Semiconductor, N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-247-3, PowerTrench®	View
	NTD6416ANLT4G	ON Semiconductor, N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK,	View
	NVBLS0D7N04M8TXG	ON Semiconductor, N-Channel 40V 240A (Tc) 357W (Tj) Surface Mount 8-HPSOF, Automotive, AEC-Q101	View
	RHK005N03T146	Rohm Semiconductor, N-Channel 30V 500mA (Ta) 200mW (Ta) Surface Mount SMT3,	View
	STW18NM80	STMicroelectronics, N-Channel 800V 17A (Tc) 190W (Tc) Through Hole TO-247-3, MDmesh™	View
	IRF7749L1TRPBF	Infineon Technologies, N-Channel 60V 33A (Ta), 200A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DIRECTFET L8,	View
	PSMN1R1-30EL,127	Nexperia USA Inc., N-Channel 30V 120A (Tc) 338W (Tc) Through Hole I2PAK,	View
	FDC8884	ON Semiconductor, N-Channel 30V 6.5A (Ta), 8A (Tc) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View

IPB70N10S312ATMA1 - Tags

IPB70N10S312ATMA1 IPB70N10S312ATMA1 PDF IPB70N10S312ATMA1 datasheet IPB70N10S312ATMA1 specification IPB70N10S312ATMA1 image IPB70N10S312ATMA1 India Renesas Electronics India IPB70N10S312ATMA1 buy IPB70N10S312ATMA1 IPB70N10S312ATMA1 price IPB70N10S312ATMA1 distributor IPB70N10S312ATMA1 supplier IPB70N10S312ATMA1 wholesales