IPB65R310CFDAATMA1

Part NumberIPB65R310CFDAATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH TO263-3

DatasheetIPx65R310CFDA

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 11.4A (Tc) 104.2W (Tc) Surface Mount D²PAK (TO-263AB)

To learn about the specification of IPB65R310CFDAATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB65R310CFDAATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB65R310CFDAATMA1.
We are offering IPB65R310CFDAATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB65R310CFDAATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx65R310CFDA

Standard Package

1000

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, CoolMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

11.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

310mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1110pF @ 100V

FET Feature

Power Dissipation (Max)

104.2W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories