IPB65R190C7ATMA1

Part NumberIPB65R190C7ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH TO263-3

DatasheetIPB65R190C7

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 13A (Tc) 72W (Tc) Surface Mount D²PAK (TO-263AB)

To learn about the specification of IPB65R190C7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB65R190C7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB65R190C7ATMA1.
We are offering IPB65R190C7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB65R190C7ATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPB65R190C7

Standard Package

Manufacturer

Infineon Technologies

Series

CoolMOS™ C7

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id

4V @ 290µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 400V

FET Feature

Power Dissipation (Max)

72W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories