IPB65R190C6ATMA1

Part NumberIPB65R190C6ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V 20.2A TO263

DatasheetIPx65R190C6

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 20.2A (Tc) 151W (Tc) Surface Mount D²PAK (TO-263AB)

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IPB65R190C6ATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx65R190C6

Standard Package

Manufacturer

Infineon Technologies

Series

CoolMOS™

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id

3.5V @ 730µA

Gate Charge (Qg) (Max) @ Vgs

73nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1620pF @ 100V

FET Feature

Power Dissipation (Max)

151W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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