IPB60R380C6ATMA1
IPB60R380C6ATMA1
Part Number IPB60R380C6ATMA1 Description MOSFET N-CH 600V 10.6A TO263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount D²PAK (TO-263AB)
To learn about the specification of IPB60R380C6ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB60R380C6ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB60R380C6ATMA1.
We are offering IPB60R380C6ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB60R380C6ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx60R380C6 Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Cut Tape (CT) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R380C6ATMA1 - Related ProductsMore >>
FCA47N60F ON Semiconductor, N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-3PN, SuperFET™
View
IRFI4227PBF Infineon Technologies, N-Channel 200V 26A (Tc) 46W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
View
IRFP4710PBF Infineon Technologies, N-Channel 100V 72A (Tc) 190W (Tc) Through Hole TO-247AC, HEXFET®
View
SIHB24N65EF-GE3 Vishay Siliconix, N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),
View
SIS862DN-T1-GE3 Vishay Siliconix, N-Channel 60V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
RD3T050CNTL1 Rohm Semiconductor, N-Channel 200V 5A (Tc) 29W (Tc) Surface Mount TO-252,
View
R6015FNX Rohm Semiconductor, N-Channel 600V 15A (Ta) 50W (Tc) Through Hole TO-220FM,
View
R6009JND3TL1 Rohm Semiconductor, N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount TO-252,
View
AOK60N30L Alpha & Omega Semiconductor Inc., N-Channel 300V 60A (Tc) 658W (Tc) Through Hole TO-247,
View
FQB19N20CTM ON Semiconductor, N-Channel 200V 19A (Tc) 3.13W (Ta), 139W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
IPW60R031CFD7XKSA1 Infineon Technologies, N-Channel 650V 63A (Tc) 278W (Tc) Through Hole PG-TO247-3, CoolMOS™ CFD7
View
FCP067N65S3 ON Semiconductor, N-Channel 650V 44A (Tc) 312W (Tc) Through Hole TO-220, SuperFET® III
View
IPB60R380C6ATMA1 - Tags
English
