IPB60R199CPATMA1
IPB60R199CPATMA1
Part Number IPB60R199CPATMA1
Description MOSFET N-CH 650V 16A TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description N-Channel 650V 16A (Tc) 139W (Tc) Surface Mount PG-TO263-3-2
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IPB60R199CPATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB60R199CP
Standard Package 1
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging Cut Tape (CT)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 100V
FET Feature -
Power Dissipation (Max) 139W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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