IPB180P04P4L02ATMA1
IPB180P04P4L02ATMA1
Part Number IPB180P04P4L02ATMA1
Description MOSFET P-CH 40V 180A TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG-TO263-7-3
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IPB180P04P4L02ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB180P04P4L-02
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 286nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 18700pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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