IPB180N06S4H1ATMA2

Part NumberIPB180N06S4H1ATMA2

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 180A TO263-7

DatasheetIPB180N06S4-H1

Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3

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IPB180N06S4H1ATMA2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPB180N06S4-H1

Standard Package

1000

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

21900pF @ 25V

FET Feature

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7-3

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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