IPB180N04S4H0ATMA1
IPB180N04S4H0ATMA1
Part Number IPB180N04S4H0ATMA1 Description MOSFET N-CH 40V 180A TO263-7-3 Package / Case TO-263-7, D²Pak (6 Leads + Tab)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
To learn about the specification of IPB180N04S4H0ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB180N04S4H0ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB180N04S4H0ATMA1.
We are offering IPB180N04S4H0ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPB180N04S4H0ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB180N04S4-H0 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 17940pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-7-3 Package / Case TO-263-7, D²Pak (6 Leads + Tab)
IPB180N04S4H0ATMA1 - Related ProductsMore >>
STD16N60M2 STMicroelectronics, N-Channel 600V 12A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ M2
View
IRLR3410TRLPBF Infineon Technologies, N-Channel 100V 17A (Tc) 79W (Tc) Surface Mount D-Pak, HEXFET®
View
CSD13383F4 Texas Instruments, N-Channel 12V 2.9A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
BSS806NEH6327XTSA1 Infineon Technologies, N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3, Automotive, AEC-Q101, HEXFET®
View
SUG90090E-GE3 Vishay Siliconix, N-Channel 200V 100A (Tc) 395W (Tc) Through Hole TO-247AC, ThunderFET®
View
NDT3055 ON Semiconductor, N-Channel 60V 4A (Ta) 3W (Ta) Surface Mount SOT-223-4,
View
SI3464DV-T1-GE3 Vishay Siliconix, N-Channel 20V 8A (Tc) 2W (Ta), 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
STW4N150 STMicroelectronics, N-Channel 1500V 4A (Tc) 160W (Tc) Through Hole TO-247-3, PowerMESH™
View
SI2304BDS-T1-GE3 Vishay Siliconix, N-Channel 30V 2.6A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
STB34NM60N STMicroelectronics, N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D2PAK, MDmesh™ II
View
ZVN4310A Diodes Incorporated, N-Channel 100V 900mA (Ta) 850mW (Ta) Through Hole TO-92-3,
View
HUF75345G3 ON Semiconductor, N-Channel 55V 75A (Tc) 325W (Tc) Through Hole TO-247-3, UltraFET™
View
IPB180N04S4H0ATMA1 - Tags
English
