IPB17N25S3100ATMA1

Part NumberIPB17N25S3100ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH TO263-3

DatasheetIPB17N25S3-100, IPP17N25S3-100

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 250V 17A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2

To learn about the specification of IPB17N25S3100ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB17N25S3100ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB17N25S3100ATMA1.
We are offering IPB17N25S3100ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB17N25S3100ATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPB17N25S3-100, IPP17N25S3-100

Standard Package

1000

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4V @ 54µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 25V

FET Feature

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories