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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB144N12N3 G,IPx147N12N3 G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 56A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14.4mOhm @ 56A, 10V Vgs(th) (Max) @ Id 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 60V FET Feature - Power Dissipation (Max) 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFP450LCPBF Vishay Siliconix, N-Channel 500V 14A (Tc) 190W (Tc) Through Hole TO-247-3,
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R6025FNZ1C9 Rohm Semiconductor, N-Channel 600V 25A (Tc) 150W (Tc) Through Hole TO-247,
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QS5U34TR Rohm Semiconductor, N-Channel 20V 1.5A (Ta) 900mW (Ta) Surface Mount TSMT5,
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FDP75N08A ON Semiconductor, N-Channel 75V 75A (Tc) 137W (Tc) Through Hole TO-220-3, UniFET™
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SIR670DP-T1-GE3 Vishay Siliconix, N-Channel 60V 60A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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TK380P65Y,RQ Toshiba Semiconductor and Storage, N-Channel 650V 9.7A (Tc) 80W (Tc) Surface Mount DPAK, DTMOSV
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IPL60R125P7AUMA1 Infineon Technologies, N-Channel 650V 27A (Tc) 111W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7
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IXFP36N20X3M IXYS, N-Channel 200V 36A (Tc) 36W (Tc) Through Hole TO-220 Isolated Tab, HiPerFET™
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DMTH6016LPS-13 Diodes Incorporated, N-Channel 60V 10.6A (Ta), 37.1A (Tc) 3W (Ta), 37.5W (Tc) Surface Mount PowerDI5060-8, Automotive, AEC-Q101
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STB35N65M5 STMicroelectronics, N-Channel 650V 27A (Tc) 160W (Tc) Surface Mount D2PAK, MDmesh™ V
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STL9N60M2 STMicroelectronics, N-Channel 600V 4.8A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ II Plus
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SIHB16N50C-E3 Vishay Siliconix, N-Channel 500V 16A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263),
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