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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB144N12N3 G,IPx147N12N3 G
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 56A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14.4mOhm @ 56A, 10V
Vgs(th) (Max) @ Id 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 60V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ON Semiconductor, N-Channel 600V 6.5A (Tc) 147W (Tc) Through Hole TO-220-3, UniFET-II™
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ON Semiconductor, N-Channel 500V 11.3A (Tc) 110W (Tc) Through Hole TO-3PF, QFET®
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