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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB144N12N3 G,IPx147N12N3 G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 56A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14.4mOhm @ 56A, 10V Vgs(th) (Max) @ Id 4V @ 61µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 60V FET Feature - Power Dissipation (Max) 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IAUT300N10S5N015ATMA1 Infineon Technologies, N-Channel 100V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™-5
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FDMT800150DC ON Semiconductor, N-Channel 150V 15A (Ta), 99A (Tc) 3.2W (Ta), 156W (Tc) Surface Mount 8-Dual Cool™88, Dual Cool™, PowerTrench®
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SI4122DY-T1-GE3 Vishay Siliconix, N-Channel 40V 27.2A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®
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IXFX94N50P2 IXYS, N-Channel 500V 94A (Tc) 1300W (Tc) Through Hole PLUS247™-3, HiPerFET™, PolarHV™
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SQD100N04-3M6L_GE3 Vishay Siliconix, N-Channel 40V 100A (Tc) 136W (Tc) Surface Mount TO-252AA,
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DMN1032UCB4-7 Diodes Incorporated, N-Channel 12V 4.8A (Ta) 900mW (Ta) Surface Mount U-WLB1010-4,
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IXFK64N50Q3 IXYS, N-Channel 500V 64A (Tc) 1000W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™
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SIJH440E-T1-GE3 Vishay Siliconix, N-Channel 40V 200A (Tc) 158W (Tc) Surface Mount PowerPAK® 8 x 8, TrenchFET® Gen IV
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DMN3110S-7 Diodes Incorporated, N-Channel 30V 2.5A (Ta) 740mW (Ta) Surface Mount SOT-23,
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PSMN1R8-40YLC,115 Nexperia USA Inc., N-Channel 40V 100A (Tc) 272W (Tc) Surface Mount LFPAK56, Power-SO8,
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STF25N80K5 STMicroelectronics, N-Channel 800V 19.5A (Tc) 40W (Tc) Through Hole TO-220FP, SuperMESH5™
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HUFA76429D3 ON Semiconductor, N-Channel 60V 20A (Tc) 110W (Tc) Through Hole I-PAK, UltraFET™
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