IPB136N08N3 G

Part NumberIPB136N08N3 G

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 80V 45A TO263-3

DatasheetIPx136,139N08N3 G

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 45A (Tc) 79W (Tc) Surface Mount D²PAK (TO-263AB)

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IPB136N08N3 G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx136,139N08N3 G

Standard Package

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

13.6mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

3.5V @ 33µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1730pF @ 40V

FET Feature

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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