IPB120N03S4L03ATMA1

Part NumberIPB120N03S4L03ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH TO263-3

DatasheetIPB120N03S4L-03

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 120A (Tc) 79W (Tc) Surface Mount D²PAK (TO-263AB)

To learn about the specification of IPB120N03S4L03ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB120N03S4L03ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB120N03S4L03ATMA1.
We are offering IPB120N03S4L03ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB120N03S4L03ATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPB120N03S4L-03

Standard Package

1000

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

2.2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

72nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5300pF @ 25V

FET Feature

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories