IPB04N03LAT

Part NumberIPB04N03LAT

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 25V 80A D2PAK

DatasheetIPB04N03LA G

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2

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IPB04N03LAT - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPB04N03LA G

Standard Package

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

2V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3877pF @ 15V

FET Feature

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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