IPB039N10N3GE8187ATMA1

Part NumberIPB039N10N3GE8187ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 160A TO263-7

DatasheetIPB039N10N3 G

Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7

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IPB039N10N3GE8187ATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPB039N10N3 G

Standard Package

1000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.5V @ 160µA

Gate Charge (Qg) (Max) @ Vgs

117nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8410pF @ 50V

FET Feature

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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