IPB024N10N5ATMA1

Part NumberIPB024N10N5ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 180A TO263-7

DatasheetIPB024N10N5

Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7

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IPB024N10N5ATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPB024N10N5

Standard Package

1000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

3.8V @ 183µA

Gate Charge (Qg) (Max) @ Vgs

138nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10200pF @ 50V

FET Feature

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7

Package / Case

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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