IPB017N10N5LFATMA1
IPB017N10N5LFATMA1
Part Number IPB017N10N5LFATMA1
Description MOSFET N-CH 100V D2PAK-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 180A (Tc) 313W (Tc) Surface Mount PG-TO263-7
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IPB017N10N5LFATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB017N10N5LF
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™-5
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.1V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 50V
FET Feature -
Power Dissipation (Max) 313W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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