IPB017N10N5ATMA1
IPB017N10N5ATMA1
Part Number IPB017N10N5ATMA1 Description MOSFET N-CH 100V 180A D2PAK-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7
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IPB017N10N5ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB017N10N5 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.8V @ 279µA Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15600pF @ 50V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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