IPA65R1K5CEXKSA1

Part NumberIPA65R1K5CEXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V TO220-3

DatasheetIPA65R1K5CE

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 5.2A (Tc) 30W (Tc) Through Hole PG-TO220 Full Pack

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IPA65R1K5CEXKSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPA65R1K5CE

Standard Package

500

Manufacturer

Infineon Technologies

Series

CoolMOS™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

225pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

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