IPA65R110CFDXKSA2

Part NumberIPA65R110CFDXKSA2

ManufacturerInfineon Technologies

DescriptionHIGH POWER_LEGACY

DatasheetIPx65R110CFD

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 31.2A (Tc) 34.7W (Tc) Through Hole PG-TO220 Full Pack

To learn about the specification of IPA65R110CFDXKSA2, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPA65R110CFDXKSA2 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPA65R110CFDXKSA2.
We are offering IPA65R110CFDXKSA2 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPA65R110CFDXKSA2 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPx65R110CFD

Standard Package

500

Manufacturer

Infineon Technologies

Series

CoolMOS™ CFD2

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs

118nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3240pF @ 100V

FET Feature

Power Dissipation (Max)

34.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

All categories