IPA65R095C7XKSA1

Part NumberIPA65R095C7XKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V TO220-3

DatasheetIPA65R095C7

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 12A (Tc) 34W (Tc) Through Hole PG-TO220-FP

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IPA65R095C7XKSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPA65R095C7

Standard Package

500

Manufacturer

Infineon Technologies

Series

CoolMOS™ C7

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

95mOhm @ 11.8A, 10V

Vgs(th) (Max) @ Id

4V @ 590µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2140pF @ 400V

FET Feature

Power Dissipation (Max)

34W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

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