IPA60R199CPXKSA1

Part NumberIPA60R199CPXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 650V 16A TO220-3

DatasheetIPA60R199CP

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 16A (Tc) 34W (Tc) Through Hole PG-TO220-FP

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IPA60R199CPXKSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPA60R199CP

Standard Package

500

Manufacturer

Infineon Technologies

Series

CoolMOS™

Packaging

Tube

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

199mOhm @ 9.9A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1.1mA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1520pF @ 100V

FET Feature

Power Dissipation (Max)

34W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

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