IPA126N10N3GXKSA1

Part NumberIPA126N10N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 35A TO220-FP

DatasheetIPA126N10N3 G

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 35A (Tc) 33W (Tc) Through Hole PG-TO220-FP

To learn about the specification of IPA126N10N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPA126N10N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPA126N10N3GXKSA1.
We are offering IPA126N10N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPA126N10N3GXKSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IPA126N10N3 G

Standard Package

500

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tube

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

12.6mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

3.5V @ 45µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 50V

FET Feature

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

All categories