IMX8T108
IMX8T108
Part Number IMX8T108 Description TRANS 2NPN 120V 0.05A 6SMT Package / Case SC-74, SOT-457Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 50mA 140MHz 300mW Surface Mount SMT6
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IMX8T108 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Not For New Designs Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA Current - Collector Cutoff (Max) 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA, 6V Power - Max 300mW Frequency - Transition 140MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-74, SOT-457 Supplier Device Package SMT6 Base Part Number *MX8
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HN4C51J(TE85L,F) Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor Array 2 NPN (Dual) Common Base 120V 100mA 100MHz 300mW Surface Mount SMV,
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MMDT5551-7-F Diodes Incorporated, Bipolar (BJT) Transistor Array 2 NPN (Dual) 160V 200mA 300MHz 200mW Surface Mount SOT-363,
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ULQ2003D1013TRY STMicroelectronics, Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SO,
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IMX8T108 - Tags
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