IMB10AT110

Part NumberIMB10AT110

ManufacturerRohm Semiconductor

DescriptionTRANS PREBIAS DUAL PNP SMT6

DatasheetEMB10, UMB10N, IMB10A

Package / CaseSC-74, SOT-457

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6

To learn about the specification of IMB10AT110, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IMB10AT110 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IMB10AT110.
We are offering IMB10AT110 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IMB10AT110 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	EMB10, UMB10N, IMB10A
Standard Package	3000
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	2.2kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250MHz
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	SMT6
Base Part Number	MB10

IMB10AT110 - Related Products

More >>

RN2713JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV,	View
PUMB9,125	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 180MHz 300mW Surface Mount 6-TSSOP,	View
RN2964(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount US6,	View
DMA564010R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini6-F3-B,	View
DMA564040R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini6-F3-B,	View
DMA9640T0R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini6-F3-B,	View
RN2703JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV,	View
DMA964070R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini6-F3-B,	View
RN2603(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View
RN2511(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 300mW Surface Mount SMV,	View
DMA566040R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini6-F3-B,	View
IMB9AT110	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6,	View

IMB10AT110 - Tags

IMB10AT110 IMB10AT110 PDF IMB10AT110 datasheet IMB10AT110 specification IMB10AT110 image IMB10AT110 India Renesas Electronics India IMB10AT110 buy IMB10AT110 IMB10AT110 price IMB10AT110 distributor IMB10AT110 supplier IMB10AT110 wholesales