IAUS200N08S5N023ATMA1

Part NumberIAUS200N08S5N023ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 80V 200A PG-HSOG-8-1

DatasheetIAUS200N08S5N023

Package / Case8-PowerSMD, Gull Wing

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 200A (Tc) 200W (Tc) Surface Mount PG-HSOG-8-1

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IAUS200N08S5N023ATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IAUS200N08S5N023

Standard Package

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.8V @ 130µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7670pF @ 40V

FET Feature

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-HSOG-8-1

Package / Case

8-PowerSMD, Gull Wing

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