HN4B01JE(TE85L,F)


HN4B01JE(TE85L,F)

Part NumberHN4B01JE(TE85L,F)

Manufacturer

Description

Datasheet

Package / CaseSOT-553

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Lead TimeTo be Confirmed

Detailed Description

HN4B01JE(TE85L,F) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 10MA, 100MA
Power - Max100mW
Frequency - Transition80MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageESV

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