HN4B01JE(TE85L,F)

Part NumberHN4B01JE(TE85L,F)

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Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	HN4B01JE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN, PNP (Emitter Coupled)
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 10MA, 100MA
Power - Max	100mW
Frequency - Transition	80MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV

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