HN1C03F-B(TE85L,F)


HN1C03F-B(TE85L,F)

Part NumberHN1C03F-B(TE85L,F)

Manufacturer

Description

Datasheet

Package / CaseSC-74, SOT-457

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Lead TimeTo be Confirmed

Detailed Description

HN1C03F-B(TE85L,F) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)300mA
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce350 @ 4mA, 2V
Power - Max300mW
Frequency - Transition30MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-74, SOT-457
Supplier Device PackageSM6

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HN1C03F-B(TE85L,F) - Tags

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