HN1C03F-B(TE85L,F)

Part NumberHN1C03F-B(TE85L,F)

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Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	HN1C03F
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	300mA
Voltage - Collector Emitter Breakdown (Max)	20V
Vce Saturation (Max) @ Ib, Ic	100mV @ 3mA, 30mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	350 @ 4mA, 2V
Power - Max	300mW
Frequency - Transition	30MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	SM6

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