HN1B04F(TE85L,F)

Part NumberHN1B04F(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS NPN/PNP 30V 0.5A SM6

DatasheetHN1B04F

Package / CaseSC-74, SOT-457

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor Array NPN, PNP 30V 500mA 200MHz 300mW Surface Mount SM6

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HN1B04F(TE85L,F) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays

Datasheet

HN1B04F

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Cut Tape (CT)

Part Status

Obsolete

Transistor Type

NPN, PNP

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

30V

Vce Saturation (Max) @ Ib, Ic

250mV @ 10mA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 100mA, 1V

Power - Max

300mW

Frequency - Transition

200MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-74, SOT-457

Supplier Device Package

SM6

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