HN1B01FU-GR,LF

Part NumberHN1B01FU-GR,LF

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS NPN/PNP 50V 0.15A US6-PLN

DatasheetHN1B01FU

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW, 210mW Surface Mount US6

To learn about the specification of HN1B01FU-GR,LF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add HN1B01FU-GR,LF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of HN1B01FU-GR,LF.
We are offering HN1B01FU-GR,LF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

HN1B01FU-GR,LF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays

Datasheet

HN1B01FU

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

Transistor Type

NPN, PNP

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

250mV @ 10mA, 100mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 2mA, 6V

Power - Max

200mW, 210mW

Frequency - Transition

150MHz

Operating Temperature

125°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

All categories