HGTP3N60A4D


HGTP3N60A4D

Part NumberHGTP3N60A4D

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HGTP3N60A4D - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package800
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusNot For New Designs
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)17A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 3A
Power - Max70W
Switching Energy37µJ (on), 25µJ (off)
Input TypeStandard
Gate Charge21nC
Td (on/off) @ 25°C6ns/73ns
Test Condition390V, 3A, 50Ohm, 15V
Reverse Recovery Time (trr)29ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

HGTP3N60A4D - Tags

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