HGTP10N120BN

Part NumberHGTP10N120BN

ManufacturerON Semiconductor

DescriptionIGBT 1200V 35A 298W TO220AB

DatasheetHGT(G,P)10N120BN, HGT1S10N120BNS

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT NPT 1200V 35A 298W Through Hole TO-220-3

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HGTP10N120BN - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

HGT(G,P)10N120BN, HGT1S10N120BNS

Standard Package

800

Manufacturer

ON Semiconductor

Series

Packaging

Tube

Part Status

Not For New Designs

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

35A

Current - Collector Pulsed (Icm)

80A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 10A

Power - Max

298W

Switching Energy

320µJ (on), 800µJ (off)

Input Type

Standard

Gate Charge

100nC

Td (on/off) @ 25°C

23ns/165ns

Test Condition

960V, 10A, 10Ohm, 15V

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package