HGT1S7N60A4DS


HGT1S7N60A4DS

Part NumberHGT1S7N60A4DS

Manufacturer

Description

Datasheet

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HGT1S7N60A4DS - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package50
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)34A
Current - Collector Pulsed (Icm)56A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 7A
Power - Max125W
Switching Energy55µJ (on), 60µJ (off)
Input TypeStandard
Gate Charge37nC
Td (on/off) @ 25°C11ns/100ns
Test Condition390V, 7A, 25Ohm, 15V
Reverse Recovery Time (trr)34ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

HGT1S7N60A4DS - Tags

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