HGT1S3N60A4DS9A


HGT1S3N60A4DS9A

Part NumberHGT1S3N60A4DS9A

Manufacturer

Description

Datasheet

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HGT1S3N60A4DS9A - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package50
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)17A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 3A
Power - Max70W
Switching Energy37µJ (on), 25µJ (off)
Input TypeStandard
Gate Charge21nC
Td (on/off) @ 25°C6ns/73ns
Test Condition390V, 3A, 50Ohm, 15V
Reverse Recovery Time (trr)29ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

HGT1S3N60A4DS9A - Tags

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