Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	HGT(G,P)10N120BN, HGT1S10N120BNS
Standard Package	800
Manufacturer	ON Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	35A
Current - Collector Pulsed (Icm)	80A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	298W
Switching Energy	320µJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	100nC
Td (on/off) @ 25°C	23ns/165ns
Test Condition	960V, 10A, 10Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB
Base Part Number	HGT1S10N120

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NGTB50N120FL2WG	ON Semiconductor, IGBT Trench Field Stop 1200V 100A 535W Through Hole TO-247,	View
IRG4PC50UDPBF	Infineon Technologies, IGBT 600V 55A 200W Through Hole TO-247AC,	View
STGW40H65DFB-4	STMicroelectronics, IGBT Trench Field Stop 650V 80A 283W Through Hole TO-247-4L, HB	View
IXYH30N170C	IXYS, IGBT 1700V 108A 937W Through Hole TO-247AD, XPT™	View
NGTB25N120FL3WG	ON Semiconductor, IGBT Trench Field Stop 1200V 100A 349W Through Hole TO-247-3,	View
RGT16NS65DGC9	Rohm Semiconductor, IGBT Trench Field Stop 650V 16A 94W Through Hole TO-262,	View
STGF10NC60KD	STMicroelectronics, IGBT 600V 9A 25W Through Hole TO-220FP, PowerMESH™	View
IXBX25N250	IXYS, IGBT 2500V 55A 300W Through Hole PLUS247™-3, BIMOSFET™	View
IXYH40N120B3D1	IXYS, IGBT 1200V 86A 480W Through Hole TO-247 (IXYH), GenX3™, XPT™	View
IXYH24N90C3D1	IXYS, IGBT 900V 44A 200W Through Hole TO-247, GenX3™, XPT™	View

HGT1S10N120BNST

Part NumberHGT1S10N120BNST