HFA3127R


HFA3127R

Part NumberHFA3127R

Manufacturer

Description

Datasheet

Package / Case16-VFQFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HFA3127R - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet
Standard Package100
ManufacturerRenesas Electronics America Inc.
Series-
PackagingTube
Part StatusObsolete
Transistor Type5 NPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)3.5dB @ 1GHz
Gain-
Power - Max150mW
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 10mA, 2V
Current - Collector (Ic) (Max)65mA
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / Case16-VFQFN Exposed Pad
Supplier Device Package16-QFN (3x3)
Base Part NumberHFA3127

HFA3127R - Tags

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