HAT2170HWS-E

Part NumberHAT2170HWS-E

ManufacturerRenesas Electronics America

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Standard Package	2500
Manufacturer	Renesas Electronics America
Series	-
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4650pF @ 10V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	5-LFPAK
Package / Case	SC-100, SOT-669