H7N1002LS-E

Part NumberH7N1002LS-E

ManufacturerRenesas Electronics America

DescriptionMOSFET N-CH 100V LDPAK

DatasheetH7N1002LD,LS,LM

Package / CaseSC-83

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 75A (Ta) 100W (Tc) Surface Mount 4-LDPAK

To learn about the specification of H7N1002LS-E, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add H7N1002LS-E with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of H7N1002LS-E.
We are offering H7N1002LS-E for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

H7N1002LS-E - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

H7N1002LD,LS,LM

Standard Package

Manufacturer

Renesas Electronics America

Series

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

75A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9700pF @ 10V

FET Feature

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-LDPAK

Package / Case

SC-83

All categories